Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices
نویسندگان
چکیده
mobility transistor devices Xinwei Wang, Omair I. Saadat, Bin Xi, Xiabing Lou, Richard J. Molnar, Tom as Palacios, and Roy G. Gordon Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts 02420, USA
منابع مشابه
Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs
The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...
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